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mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 1 rf device data freescale semiconductor, inc. rf power ldmos transistors high ruggedness n--channel enhancement--mode lateral mosfets these high ruggedness devices are designed for use in high vswr industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications . they are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 mhz. ? typical performance: v dd =50volts,i dq = 100 ma signal type p out (w) f (mhz) g ps (db) ? d (%) pulse (100 ? sec, 20% duty cycle) 1250 peak 230 24.0 74.0 cw 1250 cw 230 22.9 74.6 application circuits (1) ? typical performance frequency (mhz) signal type p out (w) g ps (db) ? d (%) 27 cw 1300 27 81 40 cw 1300 26 85 81.36 cw 1250 27 84 87.5--108 cw 1100 24 80 144--148 cw 1250 26 78 170--230 dvb--t 225 25 30 352 pulse (200 ? sec, 20% duty cycle) 1250 21.5 66 352 cw 1150 20.5 68 500 cw 1000 18 58 1. contact your local freescale sales off ice for additional information on specific circuit designs. load mismatch/ruggedness frequency (mhz) signal type vswr p out (w) test voltage result 230 pulse (100 ? sec, 20% duty cycle) >65:1 at all phase angles 1500 peak (3 db overdrive) 50 no device degradation features ? unmatched input and output allowing wide frequency range utilization ? device can be used single--ended or in a push--pull configuration ? qualified up to a maximum of 50 v dd operation ? characterized from 30 v to 50 v for extended power range ? suitable for linear application with appropriate biasing ? integrated esd protection with great er negative gate--source voltage range for improved class c operation ? characterized with series equival ent large--signal impedance parameters ? in tape and reel. r6 suffix = 150 units, 56 mm tape width, 13--inch reel. r5 suffix = 50 units, 56 mm tape width, 13--inch reel. document number: mrfe6vp61k25h rev. 4, 3/2013 freescale semiconductor technical data 1.8--600 mhz, 1250 w cw, 50 v wideband rf power ldmos transistors mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 (top view) drain a 31 figure 1. pin connections 42 drain b gate a gate b ni--1230--4h mrfe6vp61k25hr6 ni--1230--4s mrfe6vp61k25hsr5 note: the backside of the package is the source terminal for the transistor. ni--1230--4s gull MRFE6VP61K25GSR5 ? freescale semiconductor, inc., 2010--2013. a ll rights reserved.
2 rf device data freescale semiconductor, inc. mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +133 vdc gate--source voltage v gs --6.0, +10 vdc storage temperature range t stg -- 65 to +150 ? c case operating temperature t c 150 ? c total device dissipation @ t c =25 ? c derate above 25 ? c p d 1333 6.67 w w/ ? c operating junction temperature (1,2) t j 225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case cw: case temperature 63 ? c, 1250 w cw, i dq = 100 ma, 230 mhz r ? jc 0.15 ? c/w thermal impedance, junction to case pulse: case temperature 66 ? c, 1250 w pulse, 100 ? sec pulse width, 20% duty cycle, i dq = 100 ma, 230 mhz z ? jc 0.03 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 3500 v machine model (per eia/jesd22--a115) b, passes 250 v charge device model (per jesd22--c101) iv, passes 4000 v table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc drain--source breakdown voltage (v gs =0vdc,i d = 100 ma) v (br)dss 133 ? ? vdc zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 20 ? adc on characteristics gate threshold voltage (4) (v ds =10vdc,i d = 1776 ? adc) v gs(th) 1.7 2.2 2.7 vdc gate quiescent voltage (v dd =50vdc,i d = 100 madc, measured in functional test) v gs(q) 1.9 2.2 2.9 vdc drain--source on--voltage (4) (v gs =10vdc,i d =2adc) v ds(on) ? 0.15 ? vdc forward transconductance (v ds =10vdc,i d =30adc) g fs ? 28.0 ? s dynamic characteristics (4) reverse transfer capacitance (v ds =50vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 2.8 ? pf output capacitance (v ds =50vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 185 ? pf input capacitance (v ds =50vdc,v gs =0vdc ? 30 mv(rms)ac @ 1 mhz) c iss ? 562 ? pf 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. each side of device measured separately. (continued)
mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1) (in freescale test fixture, 50 ohm system) v dd =50vdc,i dq = 100 ma, p out = 1250 w peak (250 w avg.), f = 230 mhz, 100 ? sec pulse width, 20% duty cycle power gain g ps 23.0 24.0 26.0 db drain efficiency ? d 72.5 74.0 ? % input return loss irl ? -- 1 4 -- 1 0 db table 5. load mismatch/ruggedness (in freescale test fixture, 50 ohm system) i dq = 100 ma frequency (mhz) signal type vswr p out (w) test voltage, v dd result 230 pulse (100 ? sec, 20% duty cycle) >65:1 at all phase angles 1500 peak (3 db overdrive) 50 no device degradation 1. measurements made with device in straight lead configuration before any lead forming oper ation is applied. lead forming is used for gull wing (gs) parts.
4 rf device data freescale semiconductor, inc. mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 figure 2. mrfe6vp61k25hr6(hsr6) 230 mhz production test circuit component layout ? pulse -- -- -- -- cut out area c10 c11 c12 c13 r1 c1 c2 c3 c4 l1 c5 l2 r2 c9 c7 c8 c6 coax2 coax1 coax4 coax3 c14 c22 c23 c24 c21 l3 c15 c16 c17 c18 c19 c20 c26 c27 c28 l4 mrfe6vp61k25h rev. 3 c25 table 6. mrfe6vp61k25hr6(hsr6) 230 mhz production test circuit component designations and values ? pulse part description part number manufacturer c1 20 pf chip capacitor atc100b200jt500xt atc c2, c3, c5 27 pf chip capacitors atc100b270jt500xt atc c4 0.8--8.0 pf variable capacitor, gigatrim 27291sl johanson c6, c10 22 ? f, 35 v tantalum capacitors t491x226k035at kemet c7, c11 0.1 ? f chip capacitors cdr33bx104akys avx c8, c12 220 nf chip capacitors c1812c224k5ractu kemet c9, c13, c21, c25 1000 pf chip capacitors atc100b102jt50xt atc c14 43 pf chip capacitor atc100b430jt500xt atc c15 75 pf metal mica min02--002ec750j--f cde c16, c17, c18, c19 240 pf chip capacitors atc100b241jt200xt atc c20 6.2 pf chip capacitor atc100b6r2bt500xt atc c22, c23, c24, c26, c27, c28 470 ? f, 63 v electrolytic capacitors mcgpr63v477m13x26--rh multicomp coax1, 2, 3, 4 25 ? semi rigid coax, 2.2 ? shield length ut--141c--25 micro--coax l1, l2 5 nh inductors a02tklc coilcraft l3, l4 6.6 nh inductors ga3093--alc coilcraft r1, r2 10 ? chip resistors crcw120610r0jnea vishay pcb 0.030 ? , ? r =2.55 ad255a arlon
mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 5 rf device data freescale semiconductor, inc. + + + + + + + rf input z1 z2 z3 c3 z4 c1 coax1 coax2 z5 c2 z6 z7 z8 z9 z10 c4 c5 v bias l1 l2 v bias c10 c11 c12 c13 c6 c7 c8 c9 r1 r2 z11 z13 z14 dut z12 z15 z16 l3 z19 z17 z21 z22 z18 z20 z23 z25 z24 z26 c14 c15 l4 c21 c22 c23 c24 c25 c26 c27 c28 z27 z28 c16 c17 c18 c19 coax4 coax3 z29 z30 c20 rf output v supply v supply table 7. mrfe6vp61k25hr6(hsr6) 230 mhz production test circuit microstrips ? pulse description microstrip description microstrip description microstrip z1 0.192 ?? 0.082 ? microstrip z2 0.175 ?? 0.082 ? microstrip z3, z4 0.170 ?? 0.100 ? microstrip z5, z6 0.116 ?? 0.285 ? microstrip z7, z8 0.116 ?? 0.285 ? microstrip z9, z10 0.108 ?? 0.285 ? microstrip figure 3. mrfe6vp61k25hr6(hsr6) 230 mhz production test circuit schematic ? pulse z11*, z12* 0.872 ?? 0.058 ? microstrip z13, z14 0.412 ?? 0.726 ? microstrip z15, z16 0.371 ?? 0.507 ? microstrip z17*, z18* 0.466 ?? 0.363 ? microstrip z19*, z20* 0.187 ?? 0.154 ? microstrip z21, z22 0.104 ?? 0.507 ? microstrip z23, z24 1.251 ?? 0.300 ? microstrip z25, z26 0.127 ?? 0.300 ? microstrip z27, z28 0.116 ?? 0.300 ? microstrip z29 0.186 ?? 0.082 ? microstrip z30 0.179 ?? 0.082 ? microstrip * line length includes microstrip bends
6 rf device data freescale semiconductor, inc. mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 typical characteristics 50 10 2000 020 10 v ds , drain--source voltage (volts) figure 4. capacitance versus drain--source voltage c, capacitance (pf) 30 c iss 1000 100 40 c oss measured with ? 30 mv(rms)ac @ 1 mhz v gs =0vdc note: each side of device measured separately. 1 59 66 35 p in , input power (dbm) peak figure 5. output power versus input power 64 36 37 38 39 40 41 42 p out , output power (dbm) pulsed 63 60 actual ideal v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 ? sec, 20% duty cycle p1db = 61.3 dbm (1333 w) 62 61 65 p3db = 61.9 dbm (1553 w) p2db = 61.7 dbm (1472 w) 26 30 90 100 24 70 50 p out , output power (watts) peak figure 6. power gain and drain efficiency versus output power g ps , power gain (db) ? d, drain efficiency (%) 22 20 2000 21 40 60 80 23 25 16 23 0 20 19 p out , output power (watts) peak figure 7. power gain versus output power g ps , power gain (db) 200 18 1400 1600 17 400 800 1000 1200 v dd =30v 50 v 21 22 25 24 26 600 35 v 40 v 45 v 20 90 0 p out , output power (watts) peak figure 8. drain efficiency versus output power 70 200 400 600 800 1000 1200 1400 60 30 50 40 80 1600 figure 9. power gain and drain efficiency versus output power p out , output power (watts) peak g ps , power gain (db) 19 21 20 100 2000 ? d 25 _ c t c =--30 _ c 85 _ c g ps 40 60 50 20 30 ? d , drain efficiency (%) -- 3 0 _ c 25 _ c 85 _ c v dd =30v 50 v 35 v 40 v 45 v ? d, drain efficiency (%) 24 23 22 26 25 70 80 90 c rss 1000 ? d g ps v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 ? sec, 20% duty cycle 2000 1000 i dq = 100 ma, f = 230 mhz pulse width = 100 ? sec, 20% duty cycle i dq = 100 ma, f = 230 mhz pulse width = 100 ? sec, 20% duty cycle v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 ? sec, 20% duty cycle
mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 7 rf device data freescale semiconductor, inc. typical characteristics 250 10 9 90 t j , junction temperature ( ? c) figure 10. mttf versus junction temperature ? cw this above graph displays calculated mttf in hours when the device is operated at v dd =50vdc,p out = 1250 w cw, and ? d = 74.6%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 4 110 130 150 170 190 mttf (hours) 210 230 10 8 10 5 v dd =50vdc,i dq = 100 ma, p out = 1250 w peak f mhz z source ? z load ? 230 1.29 + j3.54 2.12 + j2.68 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. input matching network device under test output matching network -- -- + + z source z load figure 11. series equivalent test circuit source and load impedance ? 230 mhz pulse 50 ? 50 ?
8 rf device data freescale semiconductor, inc. mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 v dd =50vdc,i dq = 100 ma f (mhz) z source ( ? ) z load ( ? ) 1.8 (1) 34.4 + j192.0 (1) 5.00 - j4.00 (1) 27 12.5 + j7.00 7.00 + j0.70 40 5.75 + j5.06 5.39 + j2.62 81.36 4.04 + j5.93 4.89 + j2.95 88 2.20 + j6.70 4.90 + j2.90 98 2.30 + j6.90 4.10 + j2.50 108 2.30 + j7.00 4.40 + j3.60 144 1.60 + j5.00 3.90 + j1.50 175 1.33 + j3.90 3.50 + j2.50 230 1.29 + j3.54 2.12 + j2.68 352 0.98 + j1.45 1.82 + j2.05 500 0.29 + j1.47 1.79 + j1.80 1. simulated data. z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. input matching network device under test output matching network -- -- + + z source z load 50 ? 50 ? figure 12. source and load impedances optimized for irl, power and efficiency ? push--pull
mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 9 rf device data freescale semiconductor, inc. 87.5--108 mhz fm broadcast reference circuit fi g ure 13. mrfe6vp61k25hr6 ( hsr6 ) 87.5--108 mhz fm broadcast reference circuit com p onent la y out + + + + l2 l3 c3 r1 b1 c1 l1 c2 t1 coax1 coax2 c22 c23 c24 c21 c20 c19 c18 c15 c16 c17 l4 l5 c7 c8 c9 c10 c12 c11 c5 c4 coax3 mrfe6vp61k25h rev. 1 note: component numbers c6, c13 and c14 are not used. q1 table 8. mrfe6vp61k25hr6(hsr6) 87. 5--108 mhz fm broadcast referenc e circuit component designations and values part description part number manufacturer b1 long ferrite bead 2743021447 fair--rite c1 6.8 ? f, 50 v chip capacitor c4532x7r1h685k tdk c2 27 pf chip capacitor atc100b270jt500xt atc c3, c7, c8, c9, c10, c11, c12 1000 pf chip capacitors atc100b102jt50xt atc c4 39 pf mica capacitor min02--002dc390j--f cornell dubilier c5 3 pf chip capacitor atc100b3r0ct500xt atc c15, c22 10k pf chip capacitors atc200b103kt50xt atc c16, c23 1 ? f, 100 v chip capacitors c3225jb2a105kt tdk c17, c24 10 ? f, 100 v chip capacitors c5750x7s2a106mt tdk c18, c19, c20, c21 470 ? f, 63 v electrolytic capacitors mcgpr63v477m13x26--rh multicomp l1 39 nh inductor 1812sms--39njlc coilcraft l2, l3 2.5 nh inductors a01tklc coilcraft l4, l5 7 turn, #16 awg, id = 0.3 ? inductors copper wire q1 rf power ldmos transistor mrfe6vp61k25hr6 freescale r1 11 ? , 1/4 w chip resistor crcw120611r0fkea vishay t1 balun tui--9 comm concepts coax1, coax2 flex cables (12 ? )5.9 ? tc--12 comm concepts coax3 coax cable, quickform 50 ? ,8.7 ? sucoform 250--01 huber+suhner pcb 0.030 ? , ? r =3.5 tc--350 arlon heatsink ni--1230 copper heatsink c193x280t970 machine shop
10 rf device data freescale semiconductor, inc. mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 rf input v gs rf output c1 b1 l1 r1 c3 c2 t1 l2 l3 b2 b3 c4 c15 c16 c17 c19 c18 c22 c23 c24 c21 c20 coax1 coax2 c7 c8 c9 c10 c11 c12 c5 coax3 v dd v dd figure 14. mrfe6vp61k25hr6(hsr6) 87.5--108 mhz fm broadcast reference circuit schematic + + + +
mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 11 rf device data freescale semiconductor, inc. typical characteristics ? 87.5--108 mhz fm broadcast reference circuit 30 20 90 40 28 70 50 p out , output power (watts) figure 15. power gain and drain efficiency versus output power g ps , power gain (db) ? d, drain efficiency (%) 26 23 2000 25 40 60 80 27 29 1000 ? d g ps v dd =50vdc,i dq = 200 ma 24 30 100 108 mhz 98 mhz 87.5 mhz 108 mhz 98 mhz 87.5 mhz v dd =50vdc,i dq = 200 ma, p out = 1100 w cw f mhz z source ? z load ? 87.5 2.20 + j6.70 4.90 + j2.90 98 2.30 + j6.90 4.10 + j2.50 108 2.30 + j7.00 4.40 + j3.60 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 16. series equivalent 87.5--108 mhz fm broadcast reference circuit source and load impedance input matching network device under test output matching network -- -- + + z source z load 50 ? 50 ?
12 rf device data freescale semiconductor, inc. mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 144--148 mhz reference circuit figure 17. mrfe6vp61k25hr6(hsr6) 144--148 mhz reference circuit component layout + c1 coax1 mrfe6vp61k25h rev. 2 c3 r1 b1 l1 t1 c13 c14 coax2 coax3 c6 c5 c19 c20 c7 c8 c9 c10 c11 c12 c4 c18 c15 c16 c17 l2 *c7, c8, c9, c10, c11, and c12 are mounted vertically. note: component number c2 is not used. table 9. mrfe6vp61k25hr6(hsr6) 144--148 mhz reference circuit component designations and values part description part number manufacturer b1 95 ? , 100 mhz long ferrite bead 2743021447 fair--rite c1 6.8 ? f, 50 v chip capacitor c4532x7r1h685k tdk c3, c5, c7, c8, c9, c10, c11, c12, c13, c15 1000 pf chip capacitors atc100b102kt50xt atc c4 5.6 pf chip capacitor atc100b5r6ct500xt atc c6 470 pf chip capacitor atc100b471jt200xt atc c14, c16 1 ? f, 100 v chip capacitors c3225jb2a105kt tdk c17 2.2 ? f, 100 v chip capacitor hmk432b7225km--t taiyo yuden c18 470 ? f, 100 v electrolytic capacitor mcgpr100v477m16x32--rh multicomp c19, c20 15 pf chip capacitors atc100b150jt500xt atc l1 43 nh inductor b10tjlc coilcraft l2 7 turn, #14 awg, id = 0.4 ? inductor handwound freescale r1 11 ? , 1/4 w chip resistor crcw120611r0fkea vishay t1 balun tui--9 comm concepts coax1, coax2 flex cables, 10.2 ? ,4.7 ? tc--12 comm concepts coax3 coax cable, 50 ? ,6.7 ? sucoform250--01 huber+suhner pcb 0.030?, ? r =3.50 tc--350 arlon
mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 13 rf device data freescale semiconductor, inc. figure 18. mrfe6vp61k25hr6(hsr6) 144--148 mhz reference circuit schematic c7 c8 c9 c10 c11 c12 rf output c4 coax1 coax2 coax3 c5 c6 c19 c20 c17 c16 c15 c18 v dd c13 c14 l2 b1 c1 v gs c3 r1 c2 l1 rf input t1 +
14 rf device data freescale semiconductor, inc. mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 typical characteristics ? 144--148 mhz reference circuit v dd =50vdc,i dq = 200 ma, p out = 1100 w cw f mhz z source ? z load ? 144 1.6 + j5.0 3.9 + j1.5 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 19. series equivalent 144--148 mhz reference circuit source and load impedance input matching network device under test output matching network -- -- + + z source z load 50 ? 50 ? 31 20 90 50 28 70 50 p out , output power (watts) figure 20. power gain and drain efficiency versus output power g ps , power gain (db) ? d, drain efficiency (%) 26 24 2000 25 40 60 80 27 29 1000 ? d v dd =50vdc,i dq = 2500 ma, f = 144 mhz 30 100 30 1 p out , output power (watts) pep figure 21. intermodulation distortion products versus output power --100 0 -- 2 0 imd, intermodulatio n distortion (dbc) -- 5 0 -- 6 0 -- 7 0 -- 8 0 -- 9 0 -- 3 0 -- 4 0 i dq = 2500 ma 10 1000 -- 2 0 100 2000 v dd =50vdc f1 = 143.9 mhz, f2 = 144.1 mhz two--tone measurement 3rd order 3rd order 7th order 7th order 5th order 4500 ma 4500 ma g ps
mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 15 rf device data freescale semiconductor, inc. harmonic measurements figure 22. 144 mhz harmonics @ 1 kw h2 h3 h4 h5 --42 db --33 db --37 db --39 db 144 mhz, 1 kw 1.018 kw 144.00000000 mhz --42.07 db 144.00501002 mhz --32.87 db 288.00501002 mhz --37.26 db 432.00501002 mhz --38.89 db 576.00501002 mhz b 1[t1] 1[t1] 2[t1] 3[t1] 4[t1] 1 2 3 4 1 ref lvl 1.5 e 04 w marker 1 [t1] 1.018 144.00000000 rbw vbw swt 3mhz 3mhz 5ms rf att unit 10 db w 77.7 db offset 1view 1sa ext kw mhz center 525 mhz 95 mhz/ span 950 mhz a
16 rf device data freescale semiconductor, inc. mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 package dimensions
mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 17 rf device data freescale semiconductor, inc.
18 rf device data freescale semiconductor, inc. mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5
mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 19 rf device data freescale semiconductor, inc.
20 rf device data freescale semiconductor, inc. mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5
mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 21 rf device data freescale semiconductor, inc.
22 rf device data freescale semiconductor, inc. mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 product documentation and software refer to the following documents and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software, do a part number search at http://www.freesca le.com, and select the ?pa rt number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 nov. 2010 ? initial release of data sheet 1 jan. 2011 ? fig. 1, pin connections, corrected pin 4 label from rf out /v gs to rf in /v gs ,p.1 2 may 2012 ? added application circuits typ ical performance table, p. 1 ? capable of handling vswr bullet: corrected 1250 peak output power value to 1500 and converted to table, p. 1, 3 ? table 1, max ratings: final dc test specification f or drain--source voltage changed from +125 to +133 vdc, p. 2 ? table 3, esd protection characte ristics: added the device?s esd passing level as applicable to each esd class, p. 2 ? table 4, off characteristics: final dc test specification for drain--s ource breakdown volt age minimum value changed from 125 to 133 vdc, p. 2 ? table 4, on characteristics: added forward transconductance, p. 2 ? fig. 10, mttf versus junction temperature -- c w: mttf end temperature on graph changed to match maximum operating junction temperature, p. 7 ? added fig. 12, source and load impedances optimized for irl, power and efficiency ? push--pull, p. 8 ? added fig. 13, 87.5--108 mhz fm broadcast reference circuit component layout, p. 9 ? added table 9, 87.5--108 mhz fm broadcast refer ence circuit component designations and values, p. 9 ? added fig. 14, 87.5--108 mhz fm broadband reference circuit schematic, p. 10 ? added fig. 15, power gain and drain efficienc y versus output power (87.5--108 mhz), p. 11 ? added fig. 16, series equivalent 87.5--108 mh z fm broadcast reference circuit source and load impedance, p. 11 ? added fig. 17, 144--148 mhz reference circuit component layout, p. 12 ? added table 9, 144--148 mhz reference circu it component designations and values, p. 12 ? added fig. 18, 144--148 mhz reference circuit schematic, p. 13 ? added fig. 19, series equivalent 144--148 mhz r eference circuit source and load impedance, p. 14 ? added fig. 20, power gain and drain efficienc y versus output power (144--148 mhz), p. 14 ? added fig. 21, intermodulation distortion products versus output power (144--148 mhz), p. 14 ? added fig. 22, 144 mhz harmonics @ 1 kw, p. 15 3 oct. 2012 ? added part number MRFE6VP61K25GSR5, p. 1 ? added 2282--02 (ni--1230s--4 gull) package isometric, p. 1, and mechanical outline, p. 20, 21 4 mar. 2013 ? mrfe6vp61k25hr6 tape and reel option replaced with mrf6vp61k25hr5 per pcn15551. ? replaced case outline 98asb16977c, issue e with issue f, p. 16, 17. changed dimension c from 0.150 ? --0.200 ? to cc 0.170 ? --0.190 ? . ? replaced case outline 98arb18247c, issue f with issue g, p. 18, 19. changed dimension c from 0.150 ? --0.200 ? to cc 0.170 ? --0.190 ? . added minimum z dimension r0.00 ? . ? replaced case outline 98asa00459d, issue o with issue a, p. 20, 21. changed dimension c from 0.150 ? --0.200 ? to cc 0.170 ? --0.190 ? . corrected positional tolerance for dimension s.
mrfe6vp61k25hr6 mrfe6vp61k25hsr5 MRFE6VP61K25GSR5 23 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2010--2013 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: mrfe6vp61k25h rev. 4, 3/2013

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